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1

Effective lifetime measurements in silicon-on-sapphire material by time-resolved reflectometry

A. Galeckas, V. Grivickas, M. Petrauskas, L. Frank, J.A. Tellefsen Jr.

Journal:

Thin Solid Films

Year:

1990

Language:

english

File:

PDF, 434 KB

english, 1990

2

Free-carrier absorption and luminescence decay of porous silicon

V. Grivickas, J. Linnros

Journal:

Thin Solid Films

Year:

1995

Language:

english

File:

PDF, 406 KB

english, 1995

3

Low-temperature fatigue of photoluminescence in aged porous silicon

V. Grivickas, J. Linnros, J.A. Tellefsen

Journal:

Thin Solid Films

Year:

1995

Language:

english

File:

PDF, 426 KB

english, 1995

4

Carrier lifetime investigation in 4H–SiC grown by CVD and sublimation epitaxy

P. Grivickas, A. Galeckas, J. Linnros, M. Syväjärvi, R. Yakimova, V. Grivickas, J.A. Tellefsen

Journal:

Materials Science in Semiconductor Processing

Year:

2001

Language:

english

File:

PDF, 219 KB

english, 2001

5

Determination of porous silicon film parameters by polarized light reflectance measurements

P. Basmaji, V.S. Bagnato, V. Grivickas, G.I. Surdutovich, R. Vitlina

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 371 KB

english, 1993

6

Optical absorption in porous silicon of high porosity

Vytautas Grivickas, Pierre Basmaji

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 493 KB

english, 1993

7

Carrier-diffusion measurements in silicon with a Fourier-transient-grating method

Linnros, Jan, Grivickas, Vytautas

Journal:

Physical Review B

Year:

1994

Language:

english

File:

PDF, 1.12 MB

english, 1994

8

Bismuth oxysulfide film electrodes with giant incident photon-to-current conversion efficiency: dynamics of properties with deposition time

Bondarenko, Evgeny, Streltsov, Eugene A, Mazanik, Alexander V., Kulak, Anatoly, grivickas, vytautas, Scajev, Patrik, Skorb, Katja

Journal:

Physical Chemistry Chemical Physics

Year:

2018

Language:

english

File:

PDF, 2.76 MB

english, 2018

9

Crystal stacking: a route to control photoelectrochemical behavior of BiOBr films

Kazyrevich, M.E., Streltsov, E.A., Malashchonak, М.V., Mazanik, A.V., Kulak, A.I., Ščajev, P., Grivickas, V.

Journal:

Electrochimica Acta

Year:

2018

Language:

english

File:

PDF, 3.91 MB

english, 2018

10

Photoconductive Switch with High Sub-Bandgap Responsivity in Nitrogen-Doped Diamond

Hall, David L., Voss, Lars F., Grivickas, Paulius, Bora, Mihail, Conway, Adam M., Scajev, Patrik, Grivickas, Vytautas

Journal:

IEEE Electron Device Letters

Year:

2020

File:

PDF, 534 KB

2020

11

Temperature Dependence of the Absorption Coefficient in 4H- and 6H-Silicon Carbide at 355 nm Laser Pumping Wavelength

A. Galeckas, P. Grivickas, V. Grivickas, V. Bikbajevas, J. Linnros

Journal:

physica status solidi (a)

Year:

2002

Language:

english

File:

PDF, 111 KB

english, 2002

12

Ion incorporation and exchange effects in porous silicon

P Basmaji, B Matvienko, V Grivickas

Journal:

Solid State Communications

Year:

1993

Language:

english

File:

PDF, 354 KB

english, 1993

13

A study of carrier lifetime in silicon by laser-induced absorption: A perpendicular geometry measurement

V. Grivickas, J. Linnros, A. Vigelis, J. Šečkus, J.A. Tellefsen

Journal:

Solid-State Electronics

Year:

1992

Language:

english

File:

PDF, 838 KB

english, 1992

14

An accurate method for determining intrinsic optical absorption in indirect band gap semiconductors

Vytautas Grivickas

Journal:

Solid State Communications

Year:

1998

Language:

english

File:

PDF, 230 KB

english, 1998

15

Relevance of the carrier transport change in porous silicon at the onset of one excited pair per crystallite

V Grivickas, J Linnros, N Lalic, J A. Tellefsen, P Grivickas

Journal:

Thin Solid Films

Year:

1997

Language:

english

File:

PDF, 319 KB

english, 1997

16

Spatially and time-resolved infrared absorption for optical and electrical characterization of indirect band gap semiconductors

V Grivickas, A . Galeckas, V Bikbajevas, J Linnros, J.A Tellefsen

Journal:

Thin Solid Films

Year:

2000

Language:

english

File:

PDF, 845 KB

english, 2000

17

Band edge absorption, carrier recombination and transport measurements in 4H-SiC epilayers

V. Grivickas, J. Linnros, P. Grivickas, A. Galeckas

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 132 KB

english, 1999

18

Investigation of surface recombination and carrier lifetime in 4H/6H-SiC

A Galeckas, J Linnros, M Frischholz, K Rottner, N Nordell, S Karlsson, V Grivickas

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 323 KB

english, 1999

19

Properties of CdS nanocrystallites embedded in to thin ZrO2 waveguides

I. Mikulskas, E. Bernstein, J.C. Plenet, C. Bovier, R. Tomašiunas, V. Grivickas, J.V. Vaitkus, J. Mugnier, J. Dumas

Journal:

Materials Science and Engineering: B

Year:

2000

Language:

english

File:

PDF, 329 KB

english, 2000

20

Optical absorption related to Fe impurities in TlGaSe2

Vytautas Grivickas, Vladimir Gavryushin, Paulius Grivickas, Augustinas Galeckas, Vitalijus Bikbajevas, Karolis Gulbinas

Journal:

physica status solidi (a)

Year:

2011

Language:

english

File:

PDF, 685 KB

english, 2011

21

The influence of mobility on photoconductivity in cdsesingle crystals at high excitation density

R. Baltramiejūnas, V. Grivickas, J. Storasta, J. Vaitkus

Journal:

physica status solidi (a)

Year:

1973

Language:

english

File:

PDF, 213 KB

english, 1973

22

Carrier Lifetime and Material Study in Intrinsically Gettered Silicon Wafers for High Precipitate Density

V. Grivickas, V. Bikbayev, J. Šečkus, A. Vigelis, L. Frank

Journal:

physica status solidi (a)

Year:

1991

Language:

english

File:

PDF, 508 KB

english, 1991

23

Indirect absorption edge of TlGaSe2 crystals

Vytautas Grivickas, Vitalijus Bikbajevas, Paulius Grivickas

Journal:

physica status solidi (b)

Year:

2006

Language:

english

File:

PDF, 434 KB

english, 2006

24

Strong photoacoustic oscillations in layered TlGaSe2 semiconductor

Vytautas Grivickas, Vitalijus Bikbajevas, Karolis Gulbinas, Vladimir Gavryushin, Jan Linnros

Journal:

physica status solidi (b)

Year:

2007

Language:

english

File:

PDF, 457 KB

english, 2007

25

Time-resolved photoluminescence characterization of nm-sized silicon crystallites in SiO2

J Linnros, A Galeckas, N Lalic, V Grivickas

Journal:

Thin Solid Films

Year:

1997

Language:

english

File:

PDF, 291 KB

english, 1997

26

Formation of distant recombination centers in silicon by ion implantation

T. Giedrys, V. Grivickas, L. Pranevičius, A. Ragauskas, J. Vaitkus

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1985

Language:

english

File:

PDF, 385 KB

english, 1985

27

Carrier trapping and recombination in TlGaSe2 layered crystals

Vytautas Grivickas, Andrei Odrinski, Vitalijus Bikbajevas, Karolis Gulbinas

Journal:

physica status solidi (b)

Year:

2012

Language:

english

File:

PDF, 695 KB

english, 2012

28

AIP Conference Proceedings [AIP 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES: Proceedings of the E-MRS Symposium∗ F∗ - Strasbourg, (France) (8–10 October 2010)] - Internal Stress in Freestanding 3C-SiC Grown on Si and Relation to Carrier Lifetime

Grivickas, V., Gulbinas, K., Manolis, G., Kato, M., Linnros, J., Ferro, Gabriel, Siffert, Paul

Year:

2010

Language:

english

File:

PDF, 716 KB

english, 2010

29

Radiation induced effects in CdSSe microcrystallites embedded in glass

V. Grivickas, M. Petrauskas, D. Noreika, E. Vanagas, M. Kull

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1992

Language:

english

File:

PDF, 497 KB

english, 1992

30

Analysis of the stretched exponential photoluminescence decay from nanometer-sized silicon crystals in SiO[sub 2]

Linnros, Jan, Lalic, Nenad, Galeckas, Augustinas, Grivickas, Vytautas

Journal:

Journal of Applied Physics

Year:

1999

Language:

english

File:

PDF, 366 KB

english, 1999

31

Room-temperature photoluminescence in quasi-2D TlGaSe 2 and TlInS 2 semiconductors

Grivickas, Vytautas, Gulbinas, Karolis, Gavryushin, Vladimir, Bikbajevas, Vitalijus, Korolik, Olga V., Mazanik, Alexander V., Fedotov, Alexander K.

Journal:

physica status solidi (RRL) - Rapid Research Letters

Year:

2014

Language:

english

File:

PDF, 419 KB

english, 2014

32

Excitonic Absorption above the Mott Transition in Si

Grivickas, P., Grivickas, V., Linnros, J.

Journal:

Physical Review Letters

Year:

2003

Language:

english

File:

PDF, 212 KB

english, 2003

33

Fundamental band edge absorption in nominally undoped and doped 4H-SiC

Grivickas, P., Grivickas, V., Linnros, J., Galeckas, A.

Journal:

Journal of Applied Physics

Year:

2007

Language:

english

File:

PDF, 971 KB

english, 2007

34

Band-gap luminescence of GaP:S shock compressed to 5 GPa

Grivickas, P., McCluskey, M. D., Gupta, Y. M.

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 461 KB

english, 2008

35

Order-of-magnitude reduction of carrier lifetimes in [100] n-type GaAs shock-compressed to 4 GPa

Grivickas, P., McCluskey, M. D., Gupta, Y. M.

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 383 KB

english, 2011

36

Free carrier absorption and lifetime mapping in 4H SiC epilayers

Galeckas, A., Grivickas, V., Linnros, J., Bleichner, H., Hallin, C.

Journal:

Journal of Applied Physics

Year:

1997

Language:

english

File:

PDF, 491 KB

english, 1997

37

Auger recombination in 4H-SiC: Unusual temperature behavior

A. Galeckas, J. Linnros, V. Grivickas, U. Lindefelt, C. Hallin

Year:

1997

Language:

english

File:

PDF, 355 KB

english, 1997

38

Absorption saturation and photodarkening in semiconductor-doped glasses

M. Kull, J. L. Coutaz, G. Manneberg, V. Grivickas

Year:

1989

Language:

english

File:

PDF, 619 KB

english, 1989

39

Bound exciton luminescence in shock compressed GaP:S and GaP:N

Grivickas, P., McCluskey, M. D., Gupta, Y. M., Zhang, Y., Geisz, J. F.

Journal:

Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 514 KB

english, 2009

40

Optical characterization of excess carrier lifetime and surface recombination in 4H/6H–SiC

Galeckas, A., Linnros, J., Frischholz, M., Grivickas, V.

Journal:

Applied Physics Letters

Year:

2001

Language:

english

File:

PDF, 499 KB

english, 2001

41

Real-time band structure changes of GaAs during continuous dynamic compression to 5 GPa

Grivickas, P., McCluskey, M. D., Gupta, Y. M.

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 955 KB

english, 2009

42

Ambipolar diffusion coefficient in molecular-beam-epitaxy-grown silicon layers

Grivickas, V., Netiksis, V., Noreika, D., Petrauskas, M., Willander, M., Hasan, M.-A., Ni, W.-X.

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 692 KB

english, 1990

43

Hydrogenated amorphous silicon films by 60 Hz glow-discharge deposition

Fragalli, J. F., Misoguti, L., Nakagaito, A. N., Grivickas, V., Bagnato, V. S., Branz, H. M.

Journal:

Journal of Applied Physics

Year:

1993

Language:

english

File:

PDF, 737 KB

english, 1993

44

Excess carrier recombination lifetime of bulk n-type 3C-SiC

Grivickas, Vytautas, Manolis, Georgios, Gulbinas, Karolis, Jarašiūnas, Kęstutis, Kato, Masashi

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 471 KB

english, 2009

45

Modeling of carrier lifetimes in uniaxially strained GaAs

Journal:

Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 840 KB

english, 2012

46

New contactless method for carrier diffusion measurements in silicon with a high precision

Grivickas, Vytautas, Linnros, Jan

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 685 KB

english, 1991

47

Indirect band-gap transitions in GaP shocked along the [100], [110], and [111] axes

Grivickas, P., McCluskey, M. D., Gupta, Y. M.

Journal:

Physical Review B

Year:

2007

Language:

english

File:

PDF, 572 KB

english, 2007

48

-band-gap semiconductor under uniaxial strain

Grivickas, P., McCluskey, M. D., Gupta, Y. M.

Journal:

Physical Review B

Year:

2009

Language:

english

File:

PDF, 109 KB

english, 2009

49

Anisotropy of band gap absorption in TlGaSe2 semiconductor by ferroelectric phase transformation

Gulbinas, Karolis, Grivickas, Vytautas, Gavryushin, Vladimir

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 999 KB

english, 2014

50

Evaluation of Auger Recombination Rate in 4H-SiC

Galeckas, Augustinas, Linnros, Jan, Grivickas, Vytautas, Lindefelt, Ulf, Hallin, Christer

Journal:

Materials Science Forum

Year:

1998

File:

PDF, 355 KB

1998

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